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FDW262P
June 2001
FDW262P
20V P-Channel PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
? ?4.5 A, ?20 V. RDS(ON) = 47 m @ VGS = ?4.5 V RDS(ON) = 65 m @ VGS = ?2.5 V RDS(ON) = 100 m @ VGS = ?1.8 V ? RDS(ON) rated for use with 1.8 V logic ? Low gate charge (13nC typical) ? High performance trench technology for extremely low RDS(ON) ? Low profile TSSOP-8 package
Applications
? Power management ? Load switch
D S S D G S S D
5 6 7 8
4 3 2 1
TSSOP-8
Pin 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain?Source Voltage Gate-Source Voltage Drain Current ? Continuous ? Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
?20 ?8
(Note 1a)
Units
V V A W ?C
?4.5 ?40 1.3 0.6 ?55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
87 133
?C/W ?C/W
Package Marking and Ordering Information
Device Marking 262P Device FDW262P Reel Size 13'' Tape width 16mm Quantity 3000 units
2001 Fairchild Semiconductor Corporation
FDW262P Rev C(W)
FDW262P
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25?C unless otherwise noted
Parameter
Drain?Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate?Body Leakage, Forward Gate?Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = ?250 ?A ID = ?250 ?A, Referenced to 25?C VDS = ?16 V, VGS = 8 V, VGS = ?8 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
?20
Typ
Max Units
V
Off Characteristics
?14 ?1 100 ?100 mV/?C ?A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain?Source On?Resistance
VDS = VGS, ID = ?250 ?A ID= ?250 ?A, Referenced to 25?C VGS = ?4.5 V, ID = ?4.5 A VGS = ?2.5 V, ID = ?3.7 A VGS = ?1.8 V, ID = ?3 A VGS=?4.5 V, ID =?4.5A, TJ=125?C VGS = ?4.5 V, VDS = ?5 V, VDS = ?5 V ID = ?4.5 A
?0.4
?0.8 2.5 37 50 77 48
?1.5
V mV/?C
47 65 100 65
m
ID(on) gFS
On?State Drain Current Forward Transconductance
?20 16
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = ?10 V, f = 1.0 MHz
V GS = 0 V,
1193 193 96
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn?On Delay Time Turn?On Rise Time Turn?Off Delay Time Turn?Off Fall Time Total Gate Charge Gate?Source Charge Gate?Drain Charge
VDD = ?10 V, VGS = ?4.5 V,
ID = ?1 A, RGEN = 6
11 9 36 19
20 18 57 34 18
ns ns ns ns nC nC nC
VDS = ?10 V, VGS = ?4.5 V
ID = ?4.5 A,
13 2.5 3.6
Drain?Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain?Source Diode Forward Current Drain?Source Diode Forward VGS = 0 V, IS = ?1.1 A Voltage ?1.1
(Note 2)
A V
?0.7
?1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
87?C/W when mounted on a 1in2 pad of 2 oz copper.
b)
133?C/W when mounted on a minimum pad of 2 oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300?s, Duty Cycle < 2.0%
FDW262P Rev C(W)
FDW262P
Typical Characteristics
40
2.2
VGS = -4.5V
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-3.5V -3.0V
2
30
VGS = - 2.0V
1.8 1.6
-2.5V
20
-2.5V
1.4 1.2 1 0.8
-3.0V -3.5V -4.0V -4.5V
-2.0V
10
-1.8V
0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V)
0
10
20 -ID, DRAIN CURRENT (A)
30
40
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.15 RDS(ON), ON-RESISTANCE (OHM)
1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100
o
ID = -4.5A VGS = - 4.5V
ID = -2.3A
0.12
0.09
TA = 125oC
0.06
TA = 25oC
0.03
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
20
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10
VDS = -5V
-ID, DRAIN CURRENT (A) 15
-IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
25oC
VGS = 0V 1 TA = 125oC 0.1 25oC
125oC
10
0.01
5
0.001
-55oC
0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW262P Rev C(W)
FDW262P
Typical Characteristics
5 -VGS, GATE-SOURCE VOLTAGE (V) 2000
ID = -4.5A
4
VDS = -5V
-10V
1600 CAPACITANCE (pF)
f = 1 MHz VGS = 0 V
-15V
3
CISS
1200
2
800
1
COSS
400
0 0 4 8 Qg, GATE CHARGE (nC) 12 16
CRSS
0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC VGS = -4.5V SINGLE PULSE RJA = 133oC/W TA = 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 100?s
Figure 8. Capacitance Characteristics.
50 SINGLE PULSE RJA = 133?C/W TA = 25?C
40
30
1
20
0.1
10
0 0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) + RJA RJA = 133 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
o
0.1
0.1 0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDW262P Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM
STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM
STAR*POWER is used under license
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H3