FDW2506P October 2000 FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V ? 12V). Features ? ?5.3 A, ?20 V, RDS(ON) = 0.022 @ VGS = ?4.5 V. RDS(ON) = 0.033 @ VGS = ?2.5V. ? Extended VGSS range (?12V) for battery applications ? Low gate charge ? High performance trench technology for extremely low RDS(ON) ? Low profile TSSOP-8 package Applications ? Load switch ? Motor drive ? DC/DC conversion ? Power management G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current ? Continuous ? Pulsed TA=25oC unless otherwise noted Parameter Ratings ?20 ?12 (Note 1) Units V V A W ?C ?5.3 ?30 1.0 0.6 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 ?C/W Package Marking and Ordering Information Device Marking 2506P 2000 Fairchild Semiconductor Corporation Device FDW2506P Reel Size 13'' Tape width 12mm Quantity 2500 units FDW2506P Rev. C (W) FDW2506P Electrical Characteristics Symbol BVDSS BVDSS ===TJ IDSS IGSSF IGSSR TA = 25?C unless otherwise noted Parameter Drain?Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate?Body Leakage, Forward Gate?Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = ?250 ?A ID = ?250 ?A, Referenced to 25?C VDS = ?16 V, VGS = ?12 V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min ?20 Typ Max Units V Off Characteristics ?12 ?1 ?100 100 mV/?C ?A nA nA On Characteristics VGS(th) VGS(th) ===TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain?Source On?Resistance On?State Drain Current Forward Transconductance VDS = VGS, ID = ?250 ?A ID = ?250 ?A, Referenced to 25?C VGS = ?4.5 V, ID = ?5.3 A ID = ?4.4 A VGS = ?2.5 V, VGS = ?4.5 V, ID = ?5.3 A, TJ=125?C VGS = ?4.5 V, VDS = ?5 V VDS = ?5 V, ID = ?5.3 A ?0.6 ?0.8 3 0.018 0.026 0.023 ?1.5 V mV/?C 0.022 0.033 0.035 ID(on) gFS ?30 24 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = ?10 V, f = 1.0 MHz V GS = 0 V, 1015 446 118 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn?On Delay Time Turn?On Rise Time Turn?Off Delay Time Turn?Off Fall Time Total Gate Charge Gate?Source Charge Gate?Drain Charge VDD = ?5 V, VGS = ?4.5 V, ID = ?1 A, RGEN = 6 13 17 75 38 23 31 120 61 34 ns ns ns ns nC nC nC VDS = ?10V, VGS = ?4.5 V ID = ?5.3 A, 21 4.5 6 Drain?Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain?Source Diode Forward Current Drain?Source Diode Forward Voltage VGS = 0 V, IS = ?0.83 A (Note 2) ?0.83 ?0.7 ?1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) b) RJA is 125?C/W (steady state) when mounted on a 1 inch? copper pad on FR-4. RJA is 208?C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300?s, Duty Cycle < 2.0% FDW2506P Rev. C (W) FDW2506P Typical Characteristics 30 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V 25 -ID, DRAIN CURRENT (A) 20 15 -2.0V 10 5 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) -3.5V -3.0V -2.5V 2.6 2.4 VGS = -2.0V 2.2 2 1.8 1.6 1.4 -3.0V 1.2 1 0.8 0 6 12 18 24 30 -ID, DIRAIN CURRENT (A) -3.5V -4.5V -2.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 o ID = -5.3A VGS = -4.5V ID = -2.7A 0.06 0.05 0.04 TA = 125oC 0.03 TA = 25oC 0.02 0.01 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 30 25oC 125 C 20 15 10 5 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 25 -ID, DRAIN CURRENT (A) TA = -55oC VGS = 0V 10 1 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2506P Rev. C (W) FDW2506P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -5.3A 4 VDS = -5V -10V 3500 3000 CAPACITANCE (pF) -15V f = 1 MHz VGS = 0 V CISS 2500 2000 1500 1000 500 COSS CRSS 3 2 1 0 0 4 8 12 16 20 24 Qg, GATE CHARGE (nC) 0 0 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 100? 10 10ms 100ms 1s 10s VGS = -4.5V SINGLE PULSE RJA = 208oC/W TA = 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 30 25 20 15 10 5 0 0.001 SINGLE PULSE RJA = 208?C/W TA = 25?C 1 0.1 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RJA(t) = r(t) + RJA RJA = 208 ?C/W P(pk) 0.01 SINGLE PULSE t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2506P Rev. C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST? DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench? 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1