FDW2501N March 2004 FDW2501N Dual N-Channel 2.5V Specified PowerTrench? MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V ? 12V). Features ? 6 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5V RDS(ON) = 0.028 @ VGS = 2.5V ? Extended VGSS range (?12V) for battery applications. ? High performance trench technology for extremely low RDS(ON) ? Low profile TSSOP-8 package Applications ? Load switch ? Motor drive ? DC/DC conversion ? Power management G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current ? Continuous ? Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 ?12 (Note 1a) Units V V A W ?C 6 30 1.0 0.6 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 ?C/W Package Marking and Ordering Information Device Marking 2501N Device FDW2501N Reel Size 13'' Tape width 12mm Quantity 3000 units ?2004 Fairchild Semiconductor Corporation FDW2501N Rev E(W) FDW2501N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25?C unless otherwise noted Parameter Drain?Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate?Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 ?A Min Typ Max Units 20 12 1 ?100 V mV/?C ?A nA Off Characteristics ID = 250 ?A, Referenced to 25?C VDS = 16 V, VGS = ?12 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain?Source On?Resistance On?State Drain Current Forward Transconductance VDS = VGS, ID = 250 ?A ID = 250 ?A, Referenced to 25?C VGS = 4.5 V, ID = 6.0 A VGS = 2.5 V, ID = 5.0 A VGS = 4.5 V, ID = 6.0A, TJ=125?C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 6.0 A 0.4 0.9 -3.2 15.5 19.6 20 1.5 V mV/?C 18 28 29 m ID(on) gFS 30 32 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 1290 315 170 pF pF pF f = 1.0 MHz 2.0 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn?On Delay Time Turn?On Rise Time Turn?Off Delay Time Turn?Off Fall Time Total Gate Charge Gate?Source Charge Gate?Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 10 15 26 9.5 18 27 47 19 17 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 6.0 A, 12 2.4 3.3 Drain?Source Diode Characteristics and Maximum Ratings trr Qrr IS VSD Diode Reverse Recovery Time Diode Reverse Recovery Charge IF = 6.0 A, diF/dt = 100 A/?s 20 6.7 (Note 2) nS nC 0.83 1.2 A V Maximum Continuous Drain?Source Diode Forward Current Drain?Source Diode Forward VGS = 0 V, IS = 0.83 A Voltage 0.7 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 125?C/W (steady state) when mounted on a 1 inch? copper pad on FR-4. b) RJA is 208?C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300?s, Duty Cycle < 2.0% FDW2501N Rev E(W) FDW2501N Typical Characteristics 30 VGS = 4.5V 25 ID, DRAIN CURRENT (A) 3.5V 20 2.0V 15 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 VGS = 2.0V 1.6 1.4 2.5V 1.2 3.0V 3.5V 1 4.0V 4.5V 10 5 1.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.8 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 6.0A VGS = 4.5V 1.4 ID = 3.0A 0.04 1.2 0.03 1 TA = 125 C 0.02 o 0.8 TA = 25oC 0.01 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 30 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 25 ID, DRAIN CURRENT (A) TA = 125oC 1 20 25oC 0.1 15 -55oC 0.01 10 TA = 125 C 5 o -55oC 25oC 0.001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2501N Rev E(W) FDW2501N Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.0A 8 VDS = 5V 6 15V 4 CAPACITANCE (pF) 10V 1800 f = 1MHz VGS = 0 V 1500 Ciss 1200 900 600 Coss 300 2 Crss 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100us ID, DRAIN CURRENT (A) 10 100ms 1s 1 10s DC VGS = 4.5V SINGLE PULSE RJA = 208oC/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) o Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RJA = 208?C/W TA = 25?C 1ms 10ms 40 30 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 RJA(t) = r(t) * RJA RJA =208 ?C/W P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2501N Rev E(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I9