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FDG6306P
February 2001
FDG6306P
P-Channel 2.5V Specified PowerTrench? MOSFET
General Description
This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications wih a wide range of gate t drive voltage (2.5V ? 12V).
Features
? ?0.6 A, ?20 V. ? Low gate charge ? High performance trench technology for extremely low RDS(ON) ? Compact industry standard SC70-6 surface mount package RDS(ON) = 420 m @ V GS = ?4.5 V RDS(ON) = 630 m @ V GS = ?2.5 V
Applications
? Battery management ? Load switch
S G D
G 2 or 5 S 1 or 4
6 or 3 D 5 or 2 G 4 or 1 S
D G
Pin 1
S
D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current ? Continuous ? Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
?20 ? 12
(Note 1)
Units
V V A W ?C
?0.6 ?2.0 0.3 ?55 to +150
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1)
415
?C/W
Package Marking and Ordering Information
Device Marking .06 Device FDG6306P Reel Size 7'' Tape width 8mm Quantity 3000 units
?2001 Fairchild Semiconductor Corporation
FDG6306P Rev C(W)
FDG6306P
Electrical Characteristics
Symbol
BV DSS BV DSS TJ IDSS IGSSF IGSSR
TA = 25?C unless otherwise noted
Parameter
Test Conditions
Min
?20
Typ
Max
Units
V
Off Characteristics
Drain?Source Breakdown V GS = 0 V, ID = ?250 ?A Voltage Breakdown Voltage Temperature ID = ?250 ?A, Referenced to 25?C Coefficient Zero Gate Voltage Drain Current V DS = ?16 V, V GS = 0 V Gate?Body Leakage, Forward Gate?Body Leakage, Reverse
(Note 2)
?14 ?1 ?100 100
mV/?C ?A nA nA
V GS = ?12 V, V DS = 0 V V GS = 12 V, V DS = 0 V ID = ?250 ?A
On Characteristics
V GS(th) V GS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain?Source On?Resistance On?State Drain Current Forward Transconductance
V DS = V GS ,
?0.6
?1.2 3 300 470 400
?1.5
V mV/?C
ID = ?250 ?A, Referenced to 25?C V GS V GS V GS V GS = ?4.5 V, ID = ?0.6 A = ?2.5 V, ID = ?0.5 A = ?4.5 V, ID = ?0.6 A, TJ =125?C = ?4.5 V, V DS = ?5 V ID = ?0.6 A
420 630 700
M A
ID(on) gFS
?2 1.8
V DS = ?5 V,
S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
V DS = ?10 V, V GS = 0 V, f = 1.0 MHz
114 24 9
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS V SD
Notes:
Turn?On Delay Time Turn?On Rise Time Turn?Off Delay Time Turn?Off Fall Time Total Gate Charge Gate?Source Charge Gate?Drain Charge
V DD = ?10 V, ID = 1 A, V GS = ?4.5 V, RGEN = 6
5.5 14 6 1.7
11 25 12 3.4 2.0
ns ns ns ns nC nC nC
V DS = ?10 V, ID = ?0.6 A, V GS = ?4.5 V
1.4 0.3 0.4
Drain?Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain?Source Diode Forward Current Drain?Source Diode Forward Voltage V GS = 0 V, IS = ?0.25 A(Note 2) ?0.77 ?0.25 ?1.2 A V
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. RJA = 415?C/W when mounted on a minimum pad .
2. Pulse Test: Pulse Width < 300?s, Duty Cycle < 2.0%
FDG6306P Rev C (W)
FDG6306P
Typical Characteristics
2 -3.5V -3.0V -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -ID , DRAIN CURRENT (A) 1.6
2.5 2.25 2 1.75 1.5 -3.0V 1.25 1 0.75 0 0.5 1 1.5 2 2.5 3 0 0.5 1 -ID , DRAIN CURRENT (A) 1.5 2 -3.5V -4.0V -4.5V VGS = -2.5V
1.2
0.8 -2.0V 0.4
0 -V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.2 RDS(ON) ON-RESISTANCE (OHM) ,
1.4 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100
o
ID = -0.6A VGS = -4.5V
ID = -0.3 A 1
0.8 T A = 125 C 0.6 T A = 25 C 0.4
o o
125
150
0.2 1.5
2
2.5
3
3.5
4
4.5
5
T J, JUNCTION TEMPERATURE ( C)
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
2 25 C 125 C -I D, DRAIN CURRENT (A) 1.5
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 -IS, REVERSE DRAIN CURRENT (A)
VD S = -5V
TA = -55 C
o
o
VGS = 0V 1 TA = 125 C 0.1 25 C 0.01 -55 C 0.001
o o o
1
0.5
0 0.5
0.0001 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD, BODY DIODE FORWARD VOLTAGE (V)
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDG6306P Rev C (W)
FDG6306P
Typical Characteristics
5 -V GS, GATE-SOURCE VOLTAGE (V) ID = -0.6A 4 CAPACITANCE (pF) -15V 3 VDS = -5V -10V
200 f = 1MHz VGS = 0 V 160
120
CISS
2
80
1
40
COSS CRSS
0 0 0.3 0.6 0.9 1.2 1.5 1.8 Q g, GATE CHARGE (nC)
0 0 5 10 15 20 -V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
10 100? s -I D, DRAIN CURRENT (A) RDS(ON) LIMIT 1 10ms 100ms 0.1 VGS = -4.5V SINGLE PULSE o RJ A = 415 C/W TA = 25 C 0.01 0.1
o
Figure 8. Capacitance Characteristics.
30 SINGLE PULSE o R JA = 415 C/W 24 POWER (W) T A = 25 C
o
1ms 18
1s DC
12
6
1
10
100
0 0.0001
0.001
0.01
0.1
1
10
100
-V DS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
R JA(t) = r(t) + R JA R JA = 415 ?C/W P(pk) t1 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2
0.1
0.1 0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design.
FDG6306P Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G