BSP615S2L OptiMOS Power-Transistor Feature ? N-Channel Product Summary VDS R DS(on) ID 55 90 2.8 SOT 223 V m A ? Enhancement mode ? Logic Level Type BSP615S2L Package SOT 223 Ordering Code Q67060-S7211 Marking 2N615L Maximum Ratings, at Tj = 25 ?C, unless otherwise specified Parameter Continuous drain current TA=25?C TA=70?C Symbol ID Value 2.8 2.3 Unit A Pulsed drain current TA=25?C ID puls VGS Ptot Tj , Tstg 11 ? 20 1.8 -55... +150 55/150/00 V W ?C Gate source voltage Power dissipation TA=25?C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-10-29 BSP615S2L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) Thermal resistance, chip to ambient air: @ min. footprint @ 6 cm2 cooling area 1) Symbol min. RthJS RthJA Values typ. 19 max. 23 Unit - K/W - - 120 70 Electrical Characteristics, at Tj = 25 ?C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) I DSS Values typ. 1.6 max. 2 Unit 55 1.2 V Gate threshold voltage, VGS = VDS ID=12?A Zero gate voltage drain current V DS=55V, V GS=0V, Tj=25?C V DS=55V, V GS=0V, Tj=125?C2) ?A 0.1 10 10 86 67 1 100 100 150 90 nA m Gate-source leakage current V GS=20V, VDS=0V I GSS RDS(on) RDS(on) - Drain-source on-state resistance V GS=4.5V, ID=1.4A Drain-source on-state resistance V GS=10V, ID=1.4A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm? (one layer, 70 ?m thick) copper area for drain connection. PCB is vertical without blown air. 2Defined by design. Not subject to production test. Page 2 2003-10-29 BSP615S2L Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Symbol Conditions min. Values typ. 5.4 249 58 22 7.8 24 22 23 max. 330 78 33 12 36 33 34 Unit gfs Ciss Coss Crss td(on) tr td(off) tf Qgs Qgd Qg V DS2*ID*R DS(on)max, ID=2.3A V GS=0V, VDS=25V, f=1MHz 2.7 - S pF V DD=30V, V GS=4.5V, ID=2.8A, RG=24 ns VDD =40V, ID=2.8A - 0.8 2.5 7.5 3 1.1 3.8 10 - nC VDD =40V, ID=2.8A, VGS =0 to 10V V(plateau) VDD =40V, ID=2.8A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF=2.8A VR =30V, IF=lS , diF/dt=100A/?s IS TA=25?C - 0.8 30 30 2.8 11 1.1 38 38 A V ns nC Page 3 2003-10-29 BSP615S2L 1 Power dissipation Ptot = f (TC) parameter: V GS 4 V 2.4 BSP615S2L 2 Drain current ID = f (TC) parameter: V GS 10 V A 3 BSP615S2L W 2 2.4 1.8 2.2 2 Ptot 1.6 ID ?C 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 160 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 ?C 160 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = -10 2 BSP615S2L 4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T K/W 10 2 BSP615S2L A /I D tp = 120.0?s 10 1 10 1 R D S( on ) = VD S ZthJC 1 ms 10 0 ID 10 0 10 ms 10 -1 D = 0.50 0.20 0.10 0.05 0.02 10 10 -1 -2 10 -3 DC 10 -2 -1 10 single pulse 0.01 10 0 10 1 V 10 2 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 s 10 1 VDS Page 4 tp 2003-10-29 BSP615S2L 5 Typ. output characteristic ID = f (VDS); Tj=25?C parameter: tp = 80 ?s A 7 BSP615S2L 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS m VGS [V] a 2.6 b c d 2.8 Ptot = 1.8W 300 BSP615S2L e f 6 5.5 5 ji h g 240 RDS(on) 3.0 3.2 3.4 3.6 3.8 4.0 4.5 10.0 220 200 180 160 140 120 100 i j g ID 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 a c e f e f g h i j h d 80 60 40 VGS [V] = b 20 4 e f 3.4 3.6 g 3.8 h i j 4.0 4.5 10.0 0.5 1 1.5 2 2.5 3 3.5 V 5 0 0 1 2 3 4 A 5.5 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 ?s 5.6 8 Typ. forward transconductance g fs = f(ID); Tj=25?C parameter: gfs 8 A S 4.8 4.4 4 6 ID 3.6 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0 0.5 1 1.5 2 2.5 3 4 V VGS gfs 5 4 3 2 1 0 0 1 2 3 4 A ID 6 Page 5 2003-10-29 BSP615S2L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 1.4 A, VGS = 10 V m 280 BSP615S2L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS 2.5 240 220 V RDS(on) 200 180 160 140 120 100 80 60 40 20 0 -60 -20 20 60 100 ?C VGS(th) 60 ?A 1.5 12 ?A 98% 1 typ 0.5 180 0 -60 -20 20 60 100 Tj ?C 160 Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 ?s 10 2 BSP615S2L A pF Ciss 10 1 C 10 2 Coss 10 0 IF Crss Tj = 25 ?C typ Tj = 150 ?C typ Tj = 25 ?C (98%) Tj = 150 ?C (98%) 10 1 0 5 10 15 20 V VDS 30 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-10-29 BSP615S2L 13 Typ. gate charge VGS = f (QGate) parameter: ID = 2.8 A pulsed 16 BSP615S2L 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 BSP615S2L V V 12 V(BR)DSS 0,8 VDS max 62 VGS 10 0,2 VDS max 60 8 58 6 56 4 54 2 52 0 0 2 4 6 8 nC 12 50 -60 -20 20 60 100 ?C 180 Q Gate Tj Page 7 2003-10-29 BSP615S2L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 M?nchen ? Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-10-29