MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N?Channel -- Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain?Gate Voltage (RGS = 1.0 M) Gate?Source Voltage -- Continuous -- Non?repetitive (tp 50 ?s) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25?C Derate above 25?C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ? 20 ? 40 200 500 350 2.8 ? 55 to +150 mW mW/?C ?C Unit Vdc Vdc Vdc Vpk mAdc CASE 29?04, STYLE 22 TO?92 (TO?226AA) 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 357 300 Unit ?C/W ?C ELECTRICAL CHARACTERISTICS (TC = 25?C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain?Source Breakdown Voltage (VGS = 0, ID = 10 ?Adc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125?C) Gate?Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IDSS -- -- IGSSF -- 1.0 1.0 ?10 60 -- Vdc ?Adc mAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain?Source On?Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) Drain?Source On?Voltage (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) 1. Pulse Test: Pulse Width 300 ?s, Duty Cycle 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. VGS(th) rDS(on) 0.8 3.0 Vdc Ohm -- -- VDS(on) -- -- 5.0 6.0 Vdc 2.5 0.45 REV 3 ? Motorola, Inc. 1997 Motorola Small?Signal Transistors, FETs and Diodes Device Data 1 2N7000 ELECTRICAL CHARACTERISTICS (TC = 25?C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) (continued) On?State Drain Current (VGS = 4.5 Vdc, VDS = 10 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) Id(on) gfs 75 100 -- -- mAdc ?mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, V 0 f = 1.0 MHz) Ciss Coss Crss -- -- -- 60 25 5.0 pF SWITCHING CHARACTERISTICS(1) Turn?On Delay Time Turn?Off Delay Time ( (VDD = 15 V, ID = 500 mA, , , Rgen = 25 ohms, RL = 25 ohms) ton toff -- -- 10 10 ns 1. Pulse Test: Pulse Width 300 ?s, Duty Cycle 2.0%. 2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 7V 6V 5V 4V 3V 9.0 10 TA = 25?C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 1.0 VDS = 10 V 0.8 ? 55?C 125?C 25?C 0.6 0.4 0.2 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 1. Ohmic Region Figure 2. Transfer Characteristics r DS(on) , STATIC DRAIN?SOURCE ON?RESISTANCE (NORMALIZED) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 ? 60 ? 20 + 20 + 60 T, TEMPERATURE (?C) + 100 + 140 VGS = 10 V ID = 200 mA VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 ? 60 ? 20 + 20 + 60 T, TEMPERATURE (?C) + 100 + 140 VDS = VGS ID = 1.0 mA Figure 3. Temperature versus Static Drain?Source On?Resistance Figure 4. Temperature versus Gate Threshold Voltage 2 Motorola Small?Signal Transistors, FETs and Diodes Device Data 2N7000 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ??? 0.250 ??? 0.080 0.105 ??? 0.100 0.115 ??? 0.135 ??? MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ??? 6.35 ??? 2.04 2.66 ??? 2.54 2.93 ??? 3.43 ??? A R P SEATING PLANE B F L K D X X G H V 1 J C N N SECTION X?X DIM A B C D F G H J K L N P R V CASE 029?04 (TO?226AA) ISSUE AD STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN Motorola Small?Signal Transistors, FETs and Diodes Device Data 3 2N7000 Motorola reserves the right to make changes without further notice to any products herein. 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