请选择产品型号
BSM25GD120DN2
公司联系:XIA SONG ELECTRONICS CO., LIMITED
固定电话:+86-755-25801614
传真:+86-755-25801614
MSN:
基本属性
详细参数
| 产品名称 | 型号 | 封装 | 制造商 | 数量 | |
|---|---|---|---|---|---|
| IGBT Modules » BSM25GD120DN2 | BSM25GD120DN2 | IGBT Modules | Infineon | 208 | |
| 描述 | Mfr. Part #: BSM25GD120DN2 Mfr.: Infineon Description: IGBT Modules 1200V 25A FL BRIDGE Product Category: IGBT Modules RoHS: Details Configuration: Hex Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 35 A Gate-Emitter Leakage Current: 180 nA Power Dissipation: 200 W Maximum Operating Temperature: + 150 C Package / Case: EconoPACK 2A Maximum Gate Emitter Voltage: +/- 20V Minimum Operating Temperature: - 40 C Mounting Style: Screw Standard Pack Qty: 500 | ||||